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CS830 - N-Channel MOSFET

Key Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG 500 5.0 3.0 20 ±30 5 292 8.75 87.5 -55 to 150 V A A A V A mJ mJ W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=500V VGS=0V IDSS VDS=400V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) gFS VSD Ciss Coss Crss td(on) tr td(off) tf VGS=10V VDS=40V VGS=0V ID=2.5A ID=2.5A I.

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Datasheet Details

Part number CS830
Manufacturer LZG
File Size 270.68 KB
Description N-Channel MOSFET
Datasheet download datasheet CS830 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF830(CS830) : DC/DC 。 N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG 500 5.0 3.0 20 ±30 5 292 8.75 87.5 -55 to 150 V A A A V A mJ mJ W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=500V VGS=0V IDSS VDS=400V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) gFS VSD Ciss Coss Crss td(on) tr td(off) tf VGS=10V VDS=40V VGS=0V ID=2.5A ID=2.5A IS=5.0A Min 500 Typ Max 10 100 ±0.1 Unit V μA μA μA V Ω S V pF 2.0 1.15 4.2 680 85 15 20 40 90 45 4.0 1.