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CS830A4RD Datasheet Silicon N-channel Power MOSFET

Manufacturer: Huajing Microelectronics

Overview: Silicon N-Channel Power MOSFET CS830 A4RD ○R General.

General Description

: CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 5 75 1.25 performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-252, which accords with the RoHS standard.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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