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GM72V66841ET

Manufacturer: SK Hynix

GM72V66841ET datasheet by SK Hynix.

This datasheet includes multiple variants, all published together in a single manufacturer document.

GM72V66841ET datasheet preview

GM72V66841ET Datasheet Details

Part number GM72V66841ET
Datasheet GM72V66841ET GM72V66841Exx Datasheet (PDF)
File Size 86.71 KB
Manufacturer SK Hynix
Description 2M x 8-Bit x 4 Bank SDRAM
GM72V66841ET page 2 GM72V66841ET page 3

GM72V66841ET Overview

The GM72V66841ET/ELT is a synchronous dynamic random access memory prised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency up to 143 Mhz.

GM72V66841ET Key Features

  • PC133/PC100/PC66 patible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2)
  • 3.3V single Power supply
  • LVTTL interface
  • Max Clock frequency
  • 4,096 refresh cycle per 64 ms
  • Two kinds of refresh operation
  • Programmable burst access capability
  • Sequence:Sequential / Interleave
  • Length :1/2/4/8/FP
  • Programmable CAS latency : 2/3

GM72V66841ET from other manufacturers

View GM72V66841ET datasheet index

Brand Logo Part Number Description Other Manufacturers
LG Semicon Logo GM72V66841ET 2M x 8-Bit x 4 Bank SDRAM LG Semicon
LG Semicon Logo GM72V66841ELT 2M x 8-Bit x 4 Bank SDRAM LG Semicon
LG Semicon Logo GM72V66841Exx 2M x 8-Bit x 4 Bank SDRAM LG Semicon
LG Semicon Logo GM72V66841CLT 2M x 8-Bit x 4 Bank SDRAM LG Semicon
LG Semicon Logo GM72V66841CT 2M x 8-Bit x 4 Bank SDRAM LG Semicon
SK Hynix logo - Manufacturer

More Datasheets from SK Hynix

View all SK Hynix datasheets

Part Number Description
GM72V66841ELT 2M x 8-Bit x 4 Bank SDRAM
GM72V66841Exx 2M x 8-Bit x 4 Bank SDRAM
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