• Part: H5TQ1G83BFR-xxC
  • Description: 1Gb DDR3 SDRAM
  • Manufacturer: SK Hynix
  • Size: 924.94 KB
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H5TQ1G83BFR-xxC Key Features

  • VDD=VDDQ=1.5V +/- 0.075V
  • Fully differential clock inputs (CK, CK) operation
  • Differential Data Strobe (DQS, DQS)
  • On chip DLL align DQ, DQS and DQS transition with CK transition
  • DM masks write data-in at the both rising and falling edges of the data strobe
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
  • Programmable CAS latency 6, 7, 8, 9, 10 supported
  • Programmable additive latency 0, CL-1, and CL-2 supported
  • Programmable CAS Write latency (CWL) = 5, 6, 7
  • Programmable burst length 4/8 with both nibble sequential and interleave mode