Part number: H9TQ17ABJTMCUR
Manufacturer: Hynix Semiconductor
File Size: 3.45MB
Download: 📄 Datasheet
Description: 16GB eNAND (x8) / LPDDR3 16Gb(x32)
Part number: H9TQ17ABJTMCUR
Manufacturer: Hynix Semiconductor
File Size: 3.45MB
Download: 📄 Datasheet
Description: 16GB eNAND (x8) / LPDDR3 16Gb(x32)
[ CI-MCP ]
* Operation Temperature - (-25)oC ~ 85oC
* Package - 221-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free
[ e-NAND ]
[ LPDDR3 ]
and is subject to change without notice. SK hynix does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 0.1 / Mar. 2014
1
Preliminary H9TQ17ABJTMCUR series 16GB eNAND (x8) / LPDDR3 16Gb(x32) Documen.
Image gallery
TAGS
📁 Related Datasheet
H9TQ17ABJTMCUR-KTM - 16GB eNAND (x8) / LPDDR3 16Gb(x32)
(Hynix Semiconductor)
CI-MCP Specification
16GB eNAND (x8) + 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK h.
H9TQ17ABJTMCUR-KUM - 16GB eNAND (x8) / LPDDR3 16Gb(x32)
(Hynix Semiconductor)
CI-MCP Specification
16GB eNAND (x8) + 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK h.
H9TKNNN8KDMPQR - LPDDR2-S4B 8Gb
(Hynix Semiconductor)
PoP Specification 8Gb LPDDR2-S4B (x32, 2-Channel)
This document is a general product description and is subject to change without notice. SK hynix do.
H9TP32A4GDBCPR - 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32)
(Hynix Semiconductor)
CI-MCP Specification
4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32)
This document is a general product description and is subject to change without notice. SK.
H9001-01 - TERMINAL LUG
(HARWIN)
www..com
.
H9004-01 - TERMINAL LUG
(HARWIN)
et4U.com
.
H9012 - PNP Silicon Transistor
(Shantou Huashan)
www..com
P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H9012
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIO.
H9013 - NPN Silicon Transistor
(Shantou Huashan Electronic)
N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H9013
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PUL.
H9014 - NPN EPITAXIAL SILICON TRANSISTOR
(ETC)
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR
• DIE SIZE • METALLIZATION
Top Back • DIE THICKNESS • PASSIVATIO.
H9018 - NPN Silicon Transistor
(Shantou Huashan)
N PN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H9018
¨€ APPLICATIONS
AM/FM AMPLIFIER£¬ LOCAL OSCILLATOR OF FM/V.