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HY27US08561M Datasheet, Hynix Semiconductor

HY27US08561M flash equivalent, (hy27xsxx561m) 256mbit (32mx8bit / 16mx16bit) nand flash.

HY27US08561M Avg. rating / M : 1.0 rating-16

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HY27US08561M Datasheet

Features and benefits

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or .

Application

FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.D.

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