Datasheet Summary
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HY29DS162/HY29DS163
16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
KEY Features n Single Power Supply Operation n n n n n n n n n n n
- Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%)
- Ideal for battery-powered applications Simultaneous Read/Write Operations
- Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance
- 120 and 130 ns access time versions with ± 10% power supply and 30pF load Ultra Low Power Consumption (Typical Values)
- Automatic sleep mode current: 200 nA
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