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HY29DS163 - (HY29DS162 / HY29DS163) Simultaneous Read/Write Flash Memory

Download the HY29DS163 datasheet PDF. This datasheet also covers the HY29DS162 variant, as both devices belong to the same (hy29ds162 / hy29ds163) simultaneous read/write flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The HY29DS162/HY29DS163 (HY29DS16x) is a 16 Mbit, 1.8 volt-only CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words.

The device is available in 48-pin TSOP and 48-ball FBGA packages.

Word-wide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0].

Features

  • n Single Power Supply Operation n n n n n n n n n n n.
  • Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%).
  • Ideal for battery-powered.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY29DS162_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY29DS163
Manufacturer SK Hynix
File Size 572.06 KB
Description (HY29DS162 / HY29DS163) Simultaneous Read/Write Flash Memory
Datasheet download datasheet HY29DS163 Datasheet

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Other Datasheets by SK Hynix

Part Number Description
HY29DS162 (HY29DS162 / HY29DS163) Simultaneous Read/Write Flash Memory
HY29DS322 (HY29DS322 / HY29DS323) Simultaneous Read/Write Flash Memory
HY29DS323 (HY29DS322 / HY29DS323) Simultaneous Read/Write Flash Memory
HY29DL162 (HY29DL162 / HY29DL163) Simultaneous Read/Write Flash Memory
HY29DL163 (HY29DL162 / HY29DL163) Simultaneous Read/Write Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HY29DS162/HY29DS163 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.
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