HY29DL163 Datasheet | SK Hynix

FEATURES n Single Power Supply Operation n n n n n n n n n n n - Read, program, and erase operations from 2.7 to 3.6 V - Ideal for battery-powered applications Simultaneous Read/Write Operations - Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance - 70 and 80 ns access time versions with 30p F load - 90 and 120 ns access time versions with 100p F load Ultra Low Power Consumption (Typical Values) - Automatic sleep mode current: 200 n A - Standby mode current: 200 n A - Read current: 10 m A (at 5 MHz) - Program/erase current: 15 m A Boot-Block Sector Architecture with 39 Sectors in Two Banks for Fast In-System Code Changes Secured Sector: An Extra 64 Kbyte Sector that Can Be: - Factory locked and identifiable: 16 bytes available for a secure, random factoryprogrammed Electronic Serial Number - Customer lockable: Can be read, programmed, or erased just like other sectors Flexible Sector Architecture - Sector Protection allows locking of a sector or sectors to prevent program or erase operations within that sector - Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Automatic Erase Algorithm Erases Any bination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Verifies Data at Specified Addresses pliant with mon Flash Memory Interface (CFI) Specification Minimum 100,000 Write Cycles per Sector (1,000,000 cycles Typical) patible with JEDEC Standards - Pinout and software patible with single-power supply Flash devices - Superior inadvertent write protection n Data# Polling and Toggle Bits n n n n n n - Provide software confirmation of pletion of program or erase operations Ready/Busy# Pin - Provides hardware confirmation of pletion of program or erase operations Erase Suspend - Suspends an erase operation to allow programming data to or reading data from a sector in the same...