Download the HY29DS163 datasheet PDF.
This datasheet also covers the HY29DS162 variant, as both devices belong to the same (hy29ds162 / hy29ds163) simultaneous read/write flash memory family and are provided as variant models within a single manufacturer datasheet.
General Description
The HY29DS162/HY29DS163 (HY29DS16x) is a 16 Mbit, 1.8 volt-only CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words.
The device is available in 48-pin TSOP and 48-ball FBGA packages.
Word-wide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0].
Key Features
n Single Power Supply Operation
n
n n
n n
n
n n n n n.
Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%).
Note: The manufacturer provides a single datasheet file (HY29DS162_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HY29DS163 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY29DS163. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com HY29DS162/HY29DS163 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply...
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multaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.
HY29DS163 Datasheet
