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HY29F080R12 - 8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory

Datasheet Summary

Description

The HY29F080 is an 8 Megabit, 5 volt-only CMOS Flash memory organized as 1,048,576 (1M) bytes of eight-bits each.

The device is offered in industry-standard 44-pin PSOP and 40-pin TSOP packages.

The HY29F080 can be programmed and erased in-system with a single 5-volt VCC supply.

Features

  • n 5 Volt Read, Program, and Erase.
  • Minimizes system-level power requirements n High Performance.
  • Access times as fast as 70 ns n Low Power Consumption.
  • 15 mA typical active read current.
  • 30 mA typical program/erase current.
  • 5 µA maximum CMOS standby current n Compatible with JEDEC Standards.
  • Package, pinout and command-set compatible with the single-supply Flash device standard.
  • Provides superior inadvertent write protection n Sector.

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Datasheet preview – HY29F080R12

Datasheet Details

Part number HY29F080R12
Manufacturer Hynix Semiconductor
File Size 366.95 KB
Description 8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
Datasheet download datasheet HY29F080R12 Datasheet
Additional preview pages of the HY29F080R12 datasheet.

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Full PDF Text Transcription

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HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Sixteen equal size sectors of 64K bytes each – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being er
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