Part HY29LV400
Description 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
Manufacturer SK Hynix
Size 525.77 KB
SK Hynix
HY29LV400

Overview

  • Single Power Supply Operation - Read, program and erase operations from 2.7 to 3.6 volts - Ideal for battery-powered applications High Performance - 70 and 90 ns access time versions for full voltage range operation - 55 ns access time version for operation from 3.0 to 3.6 volts Ultra-low Power Consumption (Typical Values) - Automatic sleep mode current: 0.2 µA - Standby mode current: 0.2 µA - Read current: 7 mA (at 5 Mhz) - Program/erase current: 15 mA Flexible Sector Architecture: - One 16 KB, two 8 KB, one 32 KB and seven 64 KB sectors in byte mode - One 8 KW, two 4 KW, one 16 KW and seven 32 KW sectors in word mode - Top or bottom boot block configurations available Sector Protection - Allows locking of a sector or sectors to prevent program or erase operations within that sector - Sectors lockable in-system or via programming equipment - Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Fast Program and Erase Times - Sector erase time: 0.5 sec typical for each sector - Chip erase time: 5 sec typical - Byte program time: 9 µs typical - Word program time: 11 µs typical Unlock Bypass Program Command - Reduces programming time when issuing multiple program command sequences Automatic Erase Algorithm Preprograms and Erases Any Combination of Sectors or the Entire Chip Automatic Program Algorithm Writes and Verifies Data at Specified Addresses
  • Minimum 100,000 Write Cycles per Sector
  • Compatible With JEDEC standards - Pinout and software compatible with single-power supply Flash devices - Superior inadvertent write protection Data# Polling and Toggle Bits - Provide software confirmation of completion of program and erase operations Ready/Busy# Pin - Provides hardware confirmation of completion of program and erase operations Erase Suspend/Erase Resume - Suspends an erase operation to allo