900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




SK Hynix Electronic Components Datasheet

HY29LV400 Datasheet

4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

No Preview Available !

HY29LV400
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
n High Performance
– 70 and 90 ns access time versions for full
voltage range operation
– 55 ns access time version for operation
from 3.0 to 3.6 volts
n Ultra-low Power Consumption (Typical
Values)
– Automatic sleep mode current: 0.2 µA
– Standby mode current: 0.2 µA
– Read current: 7 mA (at 5 Mhz)
– Program/erase current: 15 mA
n Flexible Sector Architecture:
– One 16 KB, two 8 KB, one 32 KB and
seven 64 KB sectors in byte mode
– One 8 KW, two 4 KW, one 16 KW and
seven 32 KW sectors in word mode
– Top or bottom boot block configurations
available
n Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Sectors lockable in-system or via
programming equipment
– Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
n Fast Program and Erase Times
– Sector erase time: 0.5 sec typical for each
sector
– Chip erase time: 5 sec typical
– Byte program time: 9 µs typical
– Word program time: 11 µs typical
n Unlock Bypass Program Command
– Reduces programming time when issuing
multiple program command sequences
n Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
n Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
n Minimum 100,000 Write Cycles per Sector
n Compatible With JEDEC standards
Pinout and software compatible with
single-power supply Flash devices
Superior inadvertent write protection
n Data# Polling and Toggle Bits
Provide software confirmation of
completion of program and erase
operations
n Ready/Busy# Pin
Provides hardware confirmation of
completion of program and erase
operations
n Erase Suspend/Erase Resume
Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
Erase Resume can then be invoked to
complete suspended erasure
n Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
n Space Efficient Packaging
48-pin TSOP and 48-ball FBGA packages
LOGIC DIAGRAM
18
A[17:0]
DQ[7:0]
CE#
OE#
WE#
RESET#
BYTE#
DQ[14:8]
DQ[15]/A[-1]
RY/BY#
8
7
Preliminary
Revision 1.0, November 2001
www.DataSheet.in


SK Hynix Electronic Components Datasheet

HY29LV400 Datasheet

4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

No Preview Available !

HY29LV400
GENERAL DESCRIPTION
The HY29LV400 is a 4 Mbit, 3 volt-only, CMOS
Flash memory organized as 524,288 (512K) bytes
or 262,144 (256K) words that is available in 48-
pin TSOP and 48-ball FBGA packages. Word-
wide data (x16) appears on DQ[15:0] and byte-
wide (x8) data appears on DQ[7:0].
The HY29LV400 can be programmed and erased
in-system with a single 3 volt VCC supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a higher voltage VPP
power supply to perform those functions. The de-
vice can also be programmed in standard EPROM
programmers. Access times as low as 70 ns over
the full operating voltage range of 2.7 - 3.6 volts
are offered for timing compatibility with the zero
wait state requirements of high speed micropro-
cessors. A 55 ns version operating from 3.0 to
3.6 volts is also available. To eliminate bus con-
tention, the HY29LV400 has separate chip enable
(CE#), write enable (WE#) and output enable
(OE#) controls.
The device is compatible with the JEDEC single-
power-supply Flash command set standard. Com-
mands are written to the command register using
standard microprocessor write timings. They are
then routed to an internal state-machine that con-
trols the erase and programming circuits. Device
programming is performed a byte/word at a time
by executing the four-cycle Program Command
write sequence. This initiates an internal algorithm
that automatically times the program pulse widths
and verifies proper cell margin. Faster program-
ming times can be achieved by placing the
HY29LV400 in the Unlock Bypass mode, which
requires only two write cycles to program data in-
stead of four.
The HY29LV400s sector erase architecture allows
any number of array sectors to be erased and re-
programmed without affecting the data contents
of other sectors. Device erasure is initiated by
executing the Erase Command sequence. This
initiates an internal algorithm that automatically
preprograms the array (if it is not already pro-
grammed) before executing the erase operation.
As during programming cycles, the device auto-
matically times the erase pulse widths and veri-
fies proper cell margin. Hardware Sector Protec-
tion optionally disables both program and erase
operations in any combination of the sectors of
the memory array, while Temporary Sector Unpro-
tect allows in-system erasure and code changes
in previously protected sectors. Erase Suspend
enables the user to put erase on hold for any pe-
riod of time to read data from, or program data to,
any sector that is not selected for erasure. True
background erase can thus be achieved. The de-
vice is fully erased when shipped from the factory.
Addresses and data needed for the programming
and erase operations are internally latched during
write cycles, and the host system can detect
completion of a program or erase operation by
observing the RY/BY# pin, or by reading the DQ[7]
(Data# Polling) and DQ[6] (toggle) status bits.
Hardware data protection measures include a low
VCC detector that automatically inhibits write op-
erations during power transitions.
After a program or erase cycle has been com-
pleted, or after assertion of the RESET# pin (which
terminates any operation in progress), the device
is ready to read data or to accept another com-
mand. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Two power-saving features are embodied in the
HY29LV400. When addresses have been stable
for a specified amount of time, the device enters
the automatic sleep mode. The host can also place
the device into the standby mode. Power con-
sumption is greatly reduced in both these modes.
2
www.DataSheet.in
Rev. 1.0/Nov. 01


Part Number HY29LV400
Description 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
Maker Hynix Semiconductor
PDF Download

HY29LV400 Datasheet PDF






Similar Datasheet

1 HY29LV400 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
Hynix Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy