HY57V161610FT-5
Description
THE Hynix HY57V161610F-Series is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610F-Series is organized as 2banks of 524,288x16.
Key Features
- Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 1, 2, 3 Clocks Burst Read Single Write operation
