Datasheet4U Logo Datasheet4U.com

HY57V161610FT-7I - 16Mb Synchronous DRAM

Download the HY57V161610FT-7I datasheet PDF. This datasheet also covers the HY57V161610FT-xx variant, as both devices belong to the same 16mb synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal two banks operation.
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY57V161610FT-xx_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

More Datasheets from SK Hynix

Part Number Description
HY57V161610FT-7 16Mb Synchronous DRAM
HY57V161610FT-5 16Mb Synchronous DRAM
HY57V161610FT-5I 16Mb Synchronous DRAM
HY57V161610FT-6 16Mb Synchronous DRAM
HY57V161610FT-6I 16Mb Synchronous DRAM
HY57V161610FT-H 16Mb Synchronous DRAM
HY57V161610FT-HI 16Mb Synchronous DRAM
HY57V161610FTP-5 16Mb Synchronous DRAM
HY57V161610FTP-5I 16Mb Synchronous DRAM
HY57V161610FTP-6 16Mb Synchronous DRAM

Full PDF Text Transcription for HY57V161610FT-7I (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY57V161610FT-7I. For precise diagrams, tables, and layout, please refer to the original PDF.

16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 History Initial Draft Fina...

View more extracted text
DRAM Revision History Revision No. 0.1 1.0 History Initial Draft Final Revision Draft Date Feb. 2006 Apr. 2006 Remark Preliminary www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Apr. 2006 1 Synchronous DRAM Memory 16Mbit (1Mx16bit) HY57V161610FT(P)-xx(I) Series 11 DESCRIPTION THE Hynix HY57V161610F-Series is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high