HY57V561620CT - 4 Banks x 4M x 16Bit Synchronous DRAM

Hynix Semiconductor

HY57V561620CT Datasheet Preview — Preview of HY57V561620CT PDF

Datasheet Details

Part number	HY57V561620CT
Manufacturer	Hynix Semiconductor
File Size	251.31 KB
Description	4 Banks x 4M x 16Bit Synchronous DRAM
Datasheet	HY57V561620CT_HynixSemiconductor.pdf

HY57V561620CT Product details

Description

The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch (Leaded Package or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full pa.

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Other Datasheets by Hynix Semiconductor

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Published: Dec 14, 2007 |