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HY57V561620CTP Datasheet 4 Banks X 4m X 16bit Synchronous Dram

Manufacturer: SK Hynix

Overview: .. HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.

HY57V561620C(L)T(P) Series is offering fully synchronous operation referenced to a positive edge of the clock.

Key Features

  • Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch (Leaded Package or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation.
  • Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full pa.

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More Datasheets from SK Hynix

Part Number Description
HY57V561620CT 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CLT 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BLT-I 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BT-I 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620FLT-5 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLT-6 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLT-H 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLTP-5 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLTP-6 256M (16M x 16bit) Hynix SDRAM Memory

HY57V561620CTP Distributor