HY57V561620CLT - 4 Banks x 4M x 16Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY57V561620CLT
Manufacturer	Hynix Semiconductor
File Size	251.31 KB
Description	4 Banks x 4M x 16Bit Synchronous DRAM
Datasheet	HY57V561620CLT Datasheet
Note	This datasheet PDF includes multiple part numbers: HY57V561620CLT, HY57V561620CT. Please refer to the document for exact specifications by model.
Additional preview pages of the HY57V561620CLT datasheet.

Product details

Description

The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch (Leaded Package or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full pa.

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Other Datasheets by Hynix Semiconductor

HY57V561620CT - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CTP - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620 - 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BLT-I - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BT-I - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620FLT-5 - 256M (16M x 16bit) Hynix SDRAM Memory

Published: Dec 14, 2007 |