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HY57V561620L - 4Banks x 4M x 16Bit Synchronous DRAM

Download the HY57V561620L datasheet PDF. This datasheet also covers the HY57V561620 variant, as both devices belong to the same 4banks x 4m x 16bit synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V561620 is organized as 4 banks of 4,194,304x16.

Key Features

  • Single 3.3V ± 0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM and LDQM Internal four banks operation.
  • Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequential Burst.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY57V561620_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY57V561620L
Manufacturer SK Hynix
File Size 151.78 KB
Description 4Banks x 4M x 16Bit Synchronous DRAM
Datasheet download datasheet HY57V561620L Datasheet

Full PDF Text Transcription for HY57V561620L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY57V561620L. For precise diagrams, and layout, please refer to the original PDF.

HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applicatio...

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t CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

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