HY57V561620T - 4Banks x 4M x 16Bit Synchronous DRAM

This page provides the datasheet information for the HY57V561620T, a member of the HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM family.

Product Overview

Hynix Semiconductor

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Datasheet Details

Part number	HY57V561620T
Manufacturer	Hynix Semiconductor
File Size	151.78 KB
Description	4Banks x 4M x 16Bit Synchronous DRAM
Datasheet	HY57V561620T Datasheet
Additional preview pages of the HY57V561620T datasheet.

HY57V561620T Product details

Description

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V561620 is organized as 4 banks of 4,194,304x16.

Features

Single 3.3V ± 0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM and LDQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequential Burst.

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Other Datasheets by Hynix Semiconductor

HY57V561620 - 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BLT-I - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BT-I - 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CLT - 4 Banks x 4M x 16Bit Synchronous DRAM
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Published: Jan 4, 2006 |