HY57V64820HG - 4 Banks x 2M x 8Bit Synchronous DRAM

Hynix Semiconductor

HY57V64820HG Datasheet Preview — Preview of HY57V64820HG PDF

Datasheet Details

Part number	HY57V64820HG
Manufacturer	Hynix Semiconductor
File Size	172.94 KB
Description	4 Banks x 2M x 8Bit Synchronous DRAM
Datasheet	HY57V64820HG_HynixSemiconductor.pdf

HY57V64820HG Product details

Description

The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

📁 HY57V64820HG Similar Datasheet

HY57V641620FTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620LTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620STP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V28420BLT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V28420BT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V561620BLT-H - DRAM (Pioneer)
HY5-P - Current Transducers HY 5 to 25-P (LEM)
HY50-P - Current Transducer HY 50-P (LEM)

Other Datasheets by Hynix Semiconductor

HY57V648010 - 8Mx8 bit Synchronous DRAM Series
HY57V648011 - 8Mx8 bit Synchronous DRAM Series
HY57V648020 - 8Mx8 bit Synchronous DRAM Series
HY57V648021 - 8Mx8 bit Synchronous DRAM Series
HY57V641620ET - 4-Bank x 1M x 16-Bits SDRAM
HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM

Published: Nov 22, 2009 |