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HY57V641620ET

HY57V641620ET is 4-Bank x 1M x 16-Bits SDRAM manufactured by SK Hynix.
HY57V641620ET datasheet preview

HY57V641620ET Datasheet

Part number HY57V641620ET
Download HY57V641620ET Datasheet (PDF)
File Size 144.66 KB
Manufacturer SK Hynix
Description 4-Bank x 1M x 16-Bits SDRAM
HY57V641620ET page 2 HY57V641620ET page 3

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HY57V641620ET Distributor

HY57V641620ET Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V641620ET Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free
  • Internal four banks operation
  • Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst

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