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HY57V641620ET

Manufacturer: SK Hynix

HY57V641620ET datasheet by SK Hynix.

HY57V641620ET datasheet preview

HY57V641620ET Datasheet Details

Part number HY57V641620ET
Datasheet HY57V641620ET_HynixSemiconductor.pdf
File Size 144.66 KB
Manufacturer SK Hynix
Description 4-Bank x 1M x 16-Bits SDRAM
HY57V641620ET page 2 HY57V641620ET page 3

HY57V641620ET Overview

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V641620ET Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free
  • Internal four banks operation
  • Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst

HY57V641620FTP from other manufacturers

View HY57V641620FTP datasheet index

Brand Logo Part Number Description Other Manufacturers
Hynix Logo HY57V641620FTP Synchronous DRAM Memory 64Mbit Hynix
Hynix Logo HY57V641620LTP Synchronous DRAM Memory 64Mbit Hynix
Hynix Logo HY57V641620STP Synchronous DRAM Memory 64Mbit Hynix
SK Hynix logo - Manufacturer

More Datasheets from SK Hynix

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Part Number Description
HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG-I 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220D 4 Bank x 512K x 32-Bit SDRAM
HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM
HY57V648010 8Mx8 bit Synchronous DRAM Series
HY57V648011 8Mx8 bit Synchronous DRAM Series
HY57V648020 8Mx8 bit Synchronous DRAM Series
HY57V648021 8Mx8 bit Synchronous DRAM Series
HY57V64820HG 4 Banks x 2M x 8Bit Synchronous DRAM

HY57V641620ET Distributor

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