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HY57V641620ET - 4-Bank x 1M x 16-Bits SDRAM

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Hynix Semiconductor

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HY57V641620ET 4-Bank x 1M x 16-Bits SDRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY57V641620ET

Datasheet Details

Part number	HY57V641620ET
Manufacturer	Hynix Semiconductor
File Size	144.66 KB
Description	4-Bank x 1M x 16-Bits SDRAM
Datasheet	HY57V641620ET Datasheet
Additional preview pages of the HY57V641620ET datasheet.

HY57V641620ET Product details

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64m.

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Published: Jan 18, 2006 |