HY57V641620STP - Synchronous DRAM Memory 64Mbit

This page provides the datasheet information for the HY57V641620STP, a member of the HY57V641620FTP Synchronous DRAM Memory 64Mbit family.

Product Overview

Hynix

Part number	HY57V641620STP
Manufacturer	Hynix
File Size	160.27 KB
Description	Synchronous DRAM Memory 64Mbit
Datasheet	HY57V641620STP Datasheet
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Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64m.

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HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM (Hynix Semiconductor)
HY57V641620HG-I - 4 Banks x 1M x 16Bit Synchronous DRAM (Hynix Semiconductor)
HY57V643220C - 4 Banks x 512K x 32Bit Synchronous DRAM (Hynix Semiconductor)
HY57V643220D - 4 Bank x 512K x 32-Bit SDRAM (Hynix Semiconductor)
HY57V64420HG - 4 Banks x 4M x 4Bit Synchronous DRAM (Hynix Semiconductor)
HY57V648010 - 8Mx8 bit Synchronous DRAM Series (Hynix Semiconductor)
HY57V648011 - 8Mx8 bit Synchronous DRAM Series (Hynix Semiconductor)
HY57V648020 - 8Mx8 bit Synchronous DRAM Series (Hynix Semiconductor)
HY57V648021 - 8Mx8 bit Synchronous DRAM Series (Hynix Semiconductor)

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Published: Mar 25, 2014 |