HY57V641620STP

Manufacturer: SK Hynix

HY57V641620STP datasheet by SK Hynix.

This datasheet includes multiple variants, all published together in a single manufacturer document.

HY57V641620STP Datasheet Details

Part number	HY57V641620STP
Datasheet	HY57V641620STP HY57V641620FTP Datasheet (PDF)
File Size	160.27 KB
Manufacturer	SK Hynix
Description	Synchronous DRAM Memory 64Mbit

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free
Internal four banks operation
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks
Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type
1, 2, 4, 8 or full page for Sequential Burst
1, 2, 4 or 8 for Interleave Burst

Part Number	Description	Other Manufacturers
HY57V641620ET	4-Bank x 1M x 16-Bits SDRAM	Hynix Semiconductor
HY57V641620HG	4 Banks x 1M x 16Bit Synchronous DRAM	Hynix Semiconductor
HY57V641620HG-I	4 Banks x 1M x 16Bit Synchronous DRAM	Hynix Semiconductor

Part Number	Description
HY57V641620FTP	Synchronous DRAM Memory 64Mbit
HY57V641620LTP	Synchronous DRAM Memory 64Mbit
HY57V28420BLT	4Banks x 8M x 4bits Synchronous DRAM
HY57V28420BT	4Banks x 8M x 4bits Synchronous DRAM
HY5DU281622FTP	128Mb DDR SDRAM
HY5DU561622CTP	256M gDDR SDRAM
HY5MS7B2BLF	Mobile DDR SDRAM 512M
HY5MS7B2BLFP	Mobile DDR SDRAM
HY5PS121621CFP	DDR2 SDRAM
HY5PS561621AFP	256Mb DDR2 SDRAM