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HY57V641620HG

Manufacturer: SK Hynix

HY57V641620HG datasheet by SK Hynix.

HY57V641620HG datasheet preview

HY57V641620HG Datasheet Details

Part number HY57V641620HG
Datasheet HY57V641620HG_HynixSemiconductor.pdf
File Size 86.74 KB
Manufacturer SK Hynix
Description 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG page 2 HY57V641620HG page 3

HY57V641620HG Overview

and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V641620HG Key Features

  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full page for Sequential Burst
  • All inputs and outputs referenced to positive edge of system clock
  • 1, 2, 4 or 8 for Interleave Burst
  • Programmable CAS Latency ; 2, 3 Clocks

HY57V641620FTP from other manufacturers

View HY57V641620FTP datasheet index

Brand Logo Part Number Description Other Manufacturers
Hynix Logo HY57V641620FTP Synchronous DRAM Memory 64Mbit Hynix
Hynix Logo HY57V641620LTP Synchronous DRAM Memory 64Mbit Hynix
Hynix Logo HY57V641620STP Synchronous DRAM Memory 64Mbit Hynix
SK Hynix logo - Manufacturer

More Datasheets from SK Hynix

View all SK Hynix datasheets

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HY57V641620HG-I 4 Banks x 1M x 16Bit Synchronous DRAM
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HY57V643220D 4 Bank x 512K x 32-Bit SDRAM
HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM
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HY57V64820HG 4 Banks x 2M x 8Bit Synchronous DRAM

HY57V641620HG Distributor

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