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HY57V641620HG

HY57V641620HG is 4 Banks x 1M x 16Bit Synchronous DRAM manufactured by SK Hynix.
HY57V641620HG datasheet preview

HY57V641620HG Datasheet

Part number HY57V641620HG
Download HY57V641620HG Datasheet (PDF)
File Size 86.74 KB
Manufacturer SK Hynix
Description 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG page 2 HY57V641620HG page 3

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HY57V641620HG Distributor

HY57V641620HG Description

and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V641620HG Key Features

  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full page for Sequential Burst
  • All inputs and outputs referenced to positive edge of system clock
  • 1, 2, 4 or 8 for Interleave Burst
  • Programmable CAS Latency ; 2, 3 Clocks

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