HY5DU12422C sdram equivalent, 512 mb ddr sdram.
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* VDD, VDDQ = 2.5V ± 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V ± 0.1V for DDR400 All inputs and outputs are compatible with SSTL_.
which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations r.
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Mar. 2005 1
HY5DU12822C(L)TP HY5DU121622C(L)TP
1HY5DU12422C(L)TP
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