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MT41J256M16 - DDR3 SDRAM

Oct 17, 2014 · 28 Hits DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Features • • • • • • • • • • • • • ...

Qimonda AG

HYS72T256220HP3-B - 240-Pin Registered DDR2 SDRAM Modules

Apr 28, 2010 · 22 Hits • • • • • • • • • • Programmable self refresh rate via EMRS2 setting Programmable partial array refresh via EMRS2 settings DCC enabling via EMRS2 sett...

Samsung

K4B4G0446D - 4Gb D-die DDR3 SDRAM

Aug 4, 2016 · 21 Hits ...

Nanya

NT5CC256M16ER - Commercial and Industrial DDR3 4Gb SDRAM

Sep 7, 2024 · 21 Hits  Basis DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM  Data I...

Nanya Techology

NT5DS64M4BF - (NT5DSxxMxBx) 256Mb DDR SDRAM

Sep 24, 2006 · 19 Hits CAS Latency and Frequency CAS Latency 3 2.5 Maximum Operating Frequency (MHz) DDR400B (-5T) 200 166 • • • • • • • • • • • • • • Double data rate arc...

Hynix Semiconductor

H5TQ2G63GFR-xxJ - 2Gb DDR3 SDRAM

Aug 2, 2018 · 18 Hits and Ordering Information FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, D...

Hynix Semiconductor

H55S1222EFP-75M - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O

May 3, 2010 · 18 Hits ● Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) ● ● MULTIBANK ...

Samsung

K4B2G1646E - 2Gb E-die DDR3 SDRAM

Apr 22, 2014 · 17 Hits ...

Micron Technology

MT41K512M16 - 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM

Jun 10, 2014 · 17 Hits • Uses two 4Gb x16 Micron die in one package • Two ranks (includes dual CS#, ODT, CKE and ZQ balls) • VDD = V DDQ = 1.35V (1.283–1.425V); backward com...

Hynix Semiconductor

H5TC2G83FFR-xxA - 2Gb DDR3L SDRAM

Jun 26, 2014 · 17 Hits and Ordering Information FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe ...

Samsung

K4B1G0446F - 1Gb F-die DDR3 SDRAM

Oct 9, 2014 · 17 Hits ...

Micron

MT60B4G4 - 16Gb DDR5 SDRAM

Oct 2, 2023 · 17 Hits 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the product specifications that are unique t...

Samsung semiconductor

K4S280432C - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Apr 7, 2005 · 16 Hits • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS lat...

Micron

MT60B1G16 - 16Gb DDR5 SDRAM

Oct 2, 2023 · 16 Hits 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the product specifications that are unique t...

SDRAM dataSheet

MT41J256M16 - DDR3 SDRAM

HYS72T256220HP3-B - 240-Pin Registered DDR2 SDRAM Modules

K4B4G0446D - 4Gb D-die DDR3 SDRAM

NT5CC256M16ER - Commercial and Industrial DDR3 4Gb SDRAM

NT5DS64M4BF - (NT5DSxxMxBx) 256Mb DDR SDRAM

SCB13H4G160AF-11M - 4Gbit DDR3L SDRAM

H5TQ2G63GFR-xxJ - 2Gb DDR3 SDRAM

H55S1222EFP-75M - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O

SCB13H4G160AF-11MI - 4Gbit DDR3L SDRAM

K4B2G1646E - 2Gb E-die DDR3 SDRAM

MT41K512M16 - 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM

H5TC2G83FFR-xxA - 2Gb DDR3L SDRAM

K4B1G0446F - 1Gb F-die DDR3 SDRAM

MT60B4G4 - 16Gb DDR5 SDRAM

SCB13H4G160AF-13KI - 4Gbit DDR3L SDRAM

SCB13H4G800AF-09NI - 4Gbit DDR3L SDRAM

SCB13H4G160AF-13K - 4Gbit DDR3L SDRAM

K4S280432C - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

MT60B1G16 - 16Gb DDR5 SDRAM

SCB13H4G160AF-09NI - 4Gbit DDR3L SDRAM