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HY5DU56822E Datasheet (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

Manufacturer: SK Hynix

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General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

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Overview

www.DataSheet4U.com 256Mb DDR SDRAM HY5DU56822E(L)TP HY5DU561622E(L)TP This document is a general.

Key Features

  • VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data.

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