HY5DU56822EFP Datasheet PDF ((HY5DU561622EFP / HY5DU56822EFP) 256Mb DDR SDRAM) | Download Hynix Semiconductor HY5DU56822EFP

HY5DU56822EFP - (HY5DU561622EFP / HY5DU56822EFP) 256Mb DDR SDRAM

This page provides the datasheet information for the HY5DU56822EFP, a member of the HY5DU561622EFP (HY5DU561622EFP / HY5DU56822EFP) 256Mb DDR SDRAM family.

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

VDD, VDDQ = 2.5V ± 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data i.

Datasheet Details

Part number	HY5DU56822EFP
Manufacturer	SK Hynix
File Size	275.90 KB
Description	(HY5DU561622EFP / HY5DU56822EFP) 256Mb DDR SDRAM
Datasheet	HY5DU56822EFP Datasheet
Additional preview pages of the HY5DU56822EFP datasheet.

📁 Similar Datasheet

HY5DU561622CTP - 256M gDDR SDRAM (Hynix)

HY5DU281622 - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

HY5DU281622FTP - 128Mb DDR SDRAM (Hynix)

HY5DU281622LT-H - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

HY5DU281622LT-K - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

HY5DU281622LT-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

HY5DU281622T-H - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

HY5DU281622T-K - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

HY5DU281622T-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

HY5-P - Current Transducers HY 5 to 25-P (LEM)

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com 256Mb DDR SDRAM HY5DU56822E(L)FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / June 2006 1 HY5DU56822E(L)FP HY5DU561622E(L)FP 1 Revision History Revision No. 1.0 1.1 First release Added CL2 & CL2.5 values to the DDR400B in the AC CHARACTERISTICS History Draft Date Apr. 2006 June 2006 Remark Rev. 1.1 / June 2006 2 HY5DU56822E(L)FP HY5DU561622E(L)FP 1 DESCRIPTION The HY5DU56822E(L)FP, and HY5DU561622E(L)FP are a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

Published: Mar 7, 2007 |