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HY5DU561622EFP Datasheet (hy5du561622efp / Hy5du56822efp) 256mb Ddr Sdram

Manufacturer: SK Hynix

Overview: .. 256Mb DDR SDRAM HY5DU56822E(L)FP HY5DU561622E(L)FP This document is a general.

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • VDD, VDDQ = 2.5V ± 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data i.

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