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HY5V52LF Datasheet 4Banks x 2M x 32bits Synchronous DRAM

Manufacturer: SK Hynix

Download the HY5V52LF datasheet PDF. This datasheet also includes the HY5V52F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HY5V52F_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Overview

www.DataSheet4U.com Preliminary HY5V52(L)F(P) Series 4Banks x 2M x 32bits Synchronous DRAM Document Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision No.

0.1 History Initial Draft Draft Date Jun.

Key Features

  • Voltage : VDD, VDDQ 3.3V All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
  • Internal four banks operation.
  • Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable.