HY628400 Description
The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particulary well suited for use in high-density and low power system applications.
HY628400 Key Features
- Fully static operation and Tri-state outputs
- TTL patible inputs and outputs
- Low power consumption
- Battery backup(L/LL-part)
- 2.0V(min) data retention
- Standard