HY628400A
description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 07 / Apr. 2001 Hynix Semiconductor
HY628400A Series
DESCRIPTION
The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particularly well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V. Product Voltage Speed No. (V) (ns) HY628400A 4.5~5.5 55/70/85 HY628400A-E 4.5~5.5 55/70/85 HY628400A-I 4.5~5.5 55/70/85 Note 1. Current value is max. Operation Current/Icc(m A) 10 10 10
FEATURES
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- - Fully static operation and Tri-state outputs TTL patible inputs and outputs Low power consumption Battery...
