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HY628400 - 512K x 8bit CMOS SRAM

General Description

The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits.

The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology.

Key Features

  • Fully static operation and Tri-state outputs.
  • TTL compatible inputs and outputs.
  • Low power consumption.
  • Battery backup(L/LL-part) - 2.0V(min) data retention.
  • Standard pin configuration - 32pin 525mil SOP - 32pin 400mil TSOP-II (Standard and Reversed) Standby Current(uA) L LL 100 30 Temperature (°C) 0~70(Normal) PIN.

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Datasheet Details

Part number HY628400
Manufacturer SK Hynix
File Size 126.95 KB
Description 512K x 8bit CMOS SRAM
Datasheet download datasheet HY628400 Datasheet

Full PDF Text Transcription for HY628400 (Reference)

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HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyun...

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CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particulary well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V. Product Voltage Speed Operation No. (V) (ns) Current(mA) HY628400 5.0 55/70/85 10 Note 1. Normal : Normal Temperature 2. Current value are max.

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