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HY628100B - 128K x8 bit 5.0V Low Power CMOS slow SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup(L/LL-part) -. 2.0V(min) data retention.
  • Standard pin configuration -. 32pin SOP - 525mil -. 32pin TSOPI - 8X20(Standard) Product Voltage Speed Operation No (V) (ns) Current/Icc(mA) HY628100B 4.5~5.5 50.
  • /55/70/85 10 HY628100B-E 4.5~5.5 50.
  • /55/70/85 10 HY628100B-I 4.5~5.5 50.
  • /55/70/85 10 Comment : 50ns is available with 30pF test load. Standby Current(uA.

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Datasheet Details

Part number HY628100B
Manufacturer SK Hynix
File Size 175.72 KB
Description 128K x8 bit 5.0V Low Power CMOS slow SRAM
Datasheet download datasheet HY628100B Datasheet

Full PDF Text Transcription for HY628100B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY628100B. For precise diagrams, and layout, please refer to the original PDF.

HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No 10 11 History Initial Revision History Insert M...

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on History Revision No 10 11 History Initial Revision History Insert Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.14.2000 Dec.04.2000 Remark Final Final 12 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 12 / Apr.

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