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HY62U8400A Datasheet 512Kx8bit CMOS SRAM

Manufacturer: SK Hynix

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General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

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Overview

HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No 04 History Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ 20uA Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test Condition Add : 5pF Test Load - tCLZ Value Change : 15ns/20ns - > 10ns - VIH max : Vcc + 0.2V => Vcc + 0.3V - VIL min : - 0.2V => - 0.3V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.26.2000 Remark Final 05 06 Aug.04.2000 Dec.04.2000 Final Final 07 Apr.30.2001 Final www.DataSheet4U.

Key Features

  • Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(LL-part) -. 2.0V(min) data retention.
  • Standard pin configuration -. 32pin 525mil SOP -. 32pin 400mil TSOP-II (Standard and Reversed) Standby Current(uA) LL 20 30 30 Temperature (°C) 0~70 -25~85 -40~85 Product Voltage Speed Operation No. (V) (ns) Current/Icc(mA) HY62U8400A 2.7~3.3 70.
  • /85/100 5 HY62U8400A-E 2.7~3.3 70.
  • /85/100.

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