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HY62U8100B - 128K x8 bit 3.0V Low Power CMOS slow SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup(LL-part) -. 2.0V(min) data retention.
  • Standard pin configuration -. 32 - SOP - 525mil -. 32 - TSOP-I - 8X20(Standard and Reversed) -. 32 - sTSOP-I - 8X13.4 (Standard and Reversed) Product No. HY62U8100B HY62U8100B-E HY62U8100B-I Voltage (V) 2.7~3.3 2.7~3.3 2.7~3.3 Speed (ns) 70.
  • /85/100 70.
  • /85/100 70.
  • /85/100 Operation Current/Icc(mA) 5 5 5 Standby Cu.

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Datasheet Details

Part number HY62U8100B
Manufacturer SK Hynix
File Size 193.38 KB
Description 128K x8 bit 3.0V Low Power CMOS slow SRAM
Datasheet download datasheet HY62U8100B Datasheet

Full PDF Text Transcription for HY62U8100B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62U8100B. For precise diagrams, and layout, please refer to the original PDF.

HY62U8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No 10 History Initial Revision History Insert Rev...

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ion History Revision No 10 History Initial Revision History Insert Revised - Insert 70ns Part Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.25.2000 Remark Final 11 Sep.04.2000 Final 12 Dec.04.2000 Final 13 Apr.30.2001 Final www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 13 / Apr.

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