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HY62U8400A - 512Kx8bit CMOS SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(LL-part) -. 2.0V(min) data retention.
  • Standard pin configuration -. 32pin 525mil SOP -. 32pin 400mil TSOP-II (Standard and Reversed) Standby Current(uA) LL 20 30 30 Temperature (°C) 0~70 -25~85 -40~85 Product Voltage Speed Operation No. (V) (ns) Current/Icc(mA) HY62U8400A 2.7~3.3 70.
  • /85/100 5 HY62U8400A-E 2.7~3.3 70.
  • /85/100.

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Full PDF Text Transcription for HY62U8400A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62U8400A. For precise diagrams, and layout, please refer to the original PDF.

HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No 04 History Revision History Insert Revised - I...

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ion History Revision No 04 History Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ 20uA Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test Condition Add : 5pF Test Load - tCLZ Value Change : 15ns/20ns - > 10ns - VIH max : Vcc + 0.2V => Vcc + 0.3V - VIL min : - 0.2V => - 0.3V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.26.2000 Remark Final 05 06 Aug.04.2000 Dec.04.2000 Final Final 07 Apr.30.2001 Final www.DataSheet4U.com This document is a general product description a

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