are access time(50, 60 or 70ns) package type(SOJ or TSOP-II) and power consumption (Normal or Low power). Hyundai’s advanced circuit design andprocess technology allow th.

This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow this device to achieve hi.

HY514400

HY514400B

HY514404A

HY514260

HY514264B

HY5100

HY510N

HY5116164B

HY5116164C

HY5116400B

HY5116404B

HY5116404C

HY5116800B