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HY62256A-I - 32Kx8bit CMOS SRAM

Description

The HY62256A/ HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology.

Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600 mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard and Reversed) Product Voltage Speed Operation Standby Current(uA) No. (V) (ns) Current(mA) L LL HY62256A 5.0 55/70/85 50 1mA 100 25 HY62256A-I 5.0 55/70/85 50 1mA 100 Note 1. E. T. : Extended.

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Datasheet Details

Part number HY62256A-I
Manufacturer Hyundai
File Size 107.52 KB
Description 32Kx8bit CMOS SRAM
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HY62256A-(I) Series 32Kx8bit CMOS SRAM DESCRIPTION The HY62256A/ HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The HY62256A/ HY62256A-I has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application. FEATURES • • • • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.
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