256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
• High-speed access times: 55, 70, 100 ns
• CMOS low power operation
-- 60 mW (typical) operating
-- 3 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.7V-3.6V Vcc power supply
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP-2 and 48-pin
The ICSI IC62LV25616L and IC62LV25616LL are low-power,
4.194,304 bit static RAMs organized as 262,144 words by 16
bits. They are fabricated using ICSI's high-performance CMOS
technology. This highly reliable process coupled with innova-
tive circuit design techniques, yields high-performance and
low power consumption devices.
When CE is HIGH (deselected) or both LB and UB are HIGH,
the device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using Chip Enable
Output and Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
The IC62LV25616L and IC62LV25616LL are packaged in the
JEDEC standare 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
256K x 16
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2001, Integrated Circuit Solution Inc.
2 Integrated Circuit Solution Inc.