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IC62LV25616LL - 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

Download the IC62LV25616LL datasheet PDF. This datasheet also covers the IC62LV25616L variant, as both devices belong to the same 256kx16 bit low voltage and ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

4.194,304 bit static RAMs organized as 262,144 words by 16 bits.

They are fabricated using ICSI's high-performance CMOS technology.

Key Features

  • High-speed access times: 55, 70, 100 ns.
  • CMOS low power operation -- 60 mW (typical) operating -- 3 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 2.7V-3.6V Vcc power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Available in the 44-pin TSOP-2 and 48-pin 6.
  • 8mm TF-BGA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IC62LV25616L_ICSI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IC62LV25616LL
Manufacturer ICSI
File Size 147.11 KB
Description 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Datasheet download datasheet IC62LV25616LL Datasheet

📁 Similar Datasheet

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Other Datasheets by ICSI

Part Number Description
IC62LV25616L 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62LV256 32K x 8 Low Power SRAM
IC62LV2568L 256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM
IC62LV2568LL 256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM
IC62LV256L 32K x 8 Low Power SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IC62LV25616L IC62LV25616LL Document Title 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns product August 21,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 35 to 40mA for 55 ns commercial product 30 to 35mA for 70 ns commercial porduct 25 to 30 mA for 100 ns commercial product 4. Change for ISB1 test conditions: with CE controlled only 5.1 Change for VDR Min. : 1.2 to 1.5V 5.2 Change for IDR test condition: VCC=1.2 to 1.5V January 29,2002 1.