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IC62LV25616L - 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

Datasheet Summary

Description

4.194,304 bit static RAMs organized as 262,144 words by 16 bits.

They are fabricated using ICSI's high-performance CMOS technology.

Features

  • High-speed access times: 55, 70, 100 ns.
  • CMOS low power operation -- 60 mW (typical) operating -- 3 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 2.7V-3.6V Vcc power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Available in the 44-pin TSOP-2 and 48-pin 6.
  • 8mm TF-BGA.

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Datasheet preview – IC62LV25616L

Datasheet Details

Part number IC62LV25616L
Manufacturer ICSI
File Size 147.11 KB
Description 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Datasheet download datasheet IC62LV25616L Datasheet
Additional preview pages of the IC62LV25616L datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com IC62LV25616L IC62LV25616LL Document Title 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for tPWE: 45 to 40 ns for 55 ns product August 21,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 35 to 40mA for 55 ns commercial product 30 to 35mA for 70 ns commercial porduct 25 to 30 mA for 100 ns commercial product 4. Change for ISB1 test conditions: with CE controlled only 5.1 Change for VDR Min. : 1.2 to 1.5V 5.2 Change for IDR test condition: VCC=1.2 to 1.5V January 29,2002 1.
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