IC62LV25616LL Datasheet | ICSI

.. IC62LV25616L IC62LV25616LL Document Title 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Initial Draft Draft Date May 1,2001 Remark Preliminary 1. Change for t PWE: 45 to 40 ns for 55 ns product August 21,2001 : 60 to 40 ns for 70 ns product 2. Change for VCC: 2.2-3.6V to 2.7-3.6V 3.1 Change for ICC test conditiomn: VCC=Max. to 3V 3.2 Change for ICC: 35 to 40m A for 55 ns mercial product 30 to 35m A for 70 ns mercial porduct 25 to 30 m A for 100 ns mercial product 4. Change for ISB1 test conditions: with CE controlled only 5.1 Change for VDR Min. : 1.2 to 1.5V 5.2 Change for IDR test condition: VCC=1.2 to 1.5V January 29,2002 1.Change for ICC: 40 m A to 25 m A for 55 ns 35 m A to 20 m A for 70 ns 30 m A to 15m A for 100 ns 2.Change for IDR: 4µA to 5 µA for mercial/LL product 6µA to 9 µA for Industrial/LL Product October 9,2002 Change for VOH: 2.0V to 2.4V 0C 0D The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. LPSR013-0D 10/11/2002 IC62LV25616L IC62LV25616LL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM Features - High-speed access times: 55, 70, 100 ns - CMOS low power operation -- 60 m W (typical) operating -- 3 µW (typical) CMOS standby - TTL patible interface levels - Single 2.7V-3.6V Vcc power supply - Fully static operation: no clock or refresh required - Three state outputs - Data control for upper and lower bytes - Industrial temperature...