F6501 Description
Features Preliminary The F6501 is an 8-channel transmitter (TX) silicon IC designed using a SiGe BiCMOS process for Ku-Band SAT phased array applications. The core IC has 360° 6-bit phase control coupled with 35dB 6-bit gain control on each channel to achieve fine beam steering and gain pensation between radiating channels. The device has a 25dB nominal gain and 13dBm OP1dB.