IDT F6502
The F6502 is an 8-channel transmitter (TX) silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications. The core IC has 360° 6-bit phase control coupled with 35dB 6-bit gain control on each channel to achieve fine beam steering and gain compensation between radiating channels. The device has a 25dB nominal gain and 13dBm OP1dB.| Part No. | F6502 |
|---|---|
| Datasheet | F6502 Download |
| Manufacturer |  IDT |
| Description | Ka-Band SATCOM Transmitter |
| Buy | Stock & Price |
DESCRIPTION
The core chip achieves an RMS phase error of 3° and an RMS gain error of 0.4dB over the frequency of operation. The typical total power consumption is 1.6W (200mW per channel) at OP1dB. Competitive Advantage● High integration
● Orthogonality of phase and amplitude control
● Advanced Serial Peripheral Interface (SPI) with 4-state memory
● Superior channel-to-channel isolation
● Minimal footprint Typical
APPLICATIONS
● Ka-Band SATCOM● Aerospace and Maritime
● Beam Steering
● Test and Measurement
FEATURES
● 27GHz to