IDT F6501
The F6501 is an 8-channel transmitter (TX) silicon IC designed using a SiGe BiCMOS process for Ku-Band SATCOM phased array applications. The core IC has 360° 6-bit phase control coupled with 35dB 6-bit gain control on each channel to achieve fine beam steering and gain compensation between radiating channels. The device has a 25dB nominal gain and 13dBm OP1dB.| Part No. | F6501 |
|---|---|
| Datasheet | F6501 Download |
| Manufacturer |  IDT |
| Description | Ku-Band SATCOM Transmitter |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
Preliminary The core chip achieves an RMS phase error of 3° and an RMS gain error of 0.4dB over the frequency of operation. The typical total power consumption is 1.4W (175mW per channel) at OP1dB. Competitive Advantage● High integration
● Orthogonality of phase and amplitude control
● Advanced Serial Peripheral Interface (SPI) with 4 state memory
● Superior channel-to-channel isolation
● Minimal footprint Typical
APPLICATIONS
● Ku-Band SATCOM● Aerospace and Maritime
● Weather Radar
● Beam Steering
● Test and Measurement
● 12.5GHz to 15GHz operation
● 8 radiation channels
● 6-bit phase control
● 6-bit gain control
● 50ns typical gain settling time
● 20ns typical phase settling time
● 3° typical RMS phase error
● 0.4dB typical RMS gain error
● 35dB gain attenuation range
● 5-bit IC address
● Integrated proportional-to-absolute temperature (PTAT) sensor with external biasing
● -40°C to +95°C Internal temperature sensor
● Programmable 4-state on-chip memory
● Supply...
