F6501 Datasheet | IDT

Description Features Preliminary The F6501 is an 8-channel transmitter (TX) silicon IC designed using a Si Ge Bi CMOS process for Ku-Band SAT phased array applications. The core IC has 360° 6-bit phase control coupled with 35d B 6-bit gain control on each channel to achieve fine beam steering and gain pensation between radiating channels. The device has a 25d B nominal gain and 13d Bm OP1d B. The core chip achieves an RMS phase error of 3° and an RMS gain error of 0.4d B over the frequency of operation. The typical total power consumption is 1.4W (175m W per channel) at OP1d B. petitive Advantage - High integration - Orthogonality of phase and amplitude control - Advanced Serial Peripheral Interface (SPI) with 4 state memory - Superior channel-to-channel isolation - Minimal footprint Typical Applications - Ku-Band SAT - Aerospace and Maritime - Weather Radar - Beam Steering - Test and Measurement - 12.5GHz to 15GHz operation - 8 radiation channels - 6-bit phase control - 6-bit gain control - 50ns typical gain settling time - 20ns typical phase settling time - 3° typical RMS phase error - 0.4d B typical RMS gain error - 35d B gain attenuation range - 5-bit IC address - Integrated proportional-to-absolute temperature (PTAT) sensor with external biasing - -40°C to +95°C Internal temperature sensor - Programmable 4-state on-chip memory - Supply voltage: +2.1V to +2.5V - -40°C to +95°C ambient operating temperature range - 27°C typical ambient operating temperature - 3.8mm x 4.6mm, 62-BGA package Block Diagram Figure 1. Block Diagram RF1 RF8 RF2 RF7 RF3 RF6 RF4...