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Integrated Device Technology Electronic Components Datasheet

IDT54AHCT299 Datasheet

High Speed CMOS 8-Input Universal Shift Register

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FEATURES:
• Equivalentto ALS speeds and output drive overfull temperature
and voltage supply extremes
• 9ns typical clock to output
• IOL = 14mA over full military temperature range
• CMOS power levels (5p.W typo static)
• Both CMOS and TTL output compatible
• Substantially lower input current levels than ALS (5p.A max.)
• 8-input universal shift register
• 100% product assu rance screening to MIL-STD-883, Class B is
available
• JEDEC standard pinout for DIP and LCC
DESCRIPTION:
The IDT54174AHCT299 is an 8-bit universal shift register
built using advanced CEMOS'", a dual metal CMOS technology.
The IDT54174AHCT299 is an 8-bit universal shift/storage reg-
ister with 3-state outputs. Four modes of operation are possible:
hold (store), shift left, shift right and load data. The parallel
load inputs and flip-flop outputs are multiplexed to reduce the
total number of package pins. Additional outputs are provided
for flip-flops 0 0-07 to allow easy serial cascading. A separate
active LOW Master Reset is used to reset the register.
PIN CONFIGURATIONS
S.
0E1
0E2
1,0,
1,0.
I/o,
I/O.
D.
Mii
GND
Vee
S,
os,
0,
110,
110,
110,
110,
CP
OS.
SSDFCT299-001
DIP
TOPYIEW
FUNCTIONAL BLOCK DIAGRAM
Mn
GND
OS.
CP
1/01
l J LJ L J L J LJ
:::::9 8 7 6 5 43:::
S,
SSDFCT299-002
LCC
TOP VIEW
II
CEMOS is a trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
CI 1986 Integrated Device Technology. Inc.
5-57
SSDFCT299-003
JULY 1986
Printed in U.SA


Integrated Device Technology Electronic Components Datasheet

IDT54AHCT299 Datasheet

High Speed CMOS 8-Input Universal Shift Register

No Preview Available !

IDT54174AHCT299
HIGH-SPEED CMOS a-INPUT UNIVERSAL SHIFT REGISTER
ABSOLUTE MAXIMUM RATING(1)
SYMBOL
RATING
COMMERCIAL MILITARY UNIT
VTERM
Terminal
Voltage with
Respect to GND
-0.5 to +7.0
-0.5 to +7.0
V
TA
Operation
Temperature
Oto +70
-55 to +125
·C
TBIAS
Temperature
Under Bias
-55 to +125 -65 to +135 ·C
TSTG
Storage
Temperature
-55 to +125 -65 to +155 ·C
lOUT
DC Output
Current
120 120 mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied,
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
TA =O·C to +70°C
Vee =5.0V ± 5%
Min. =4.75V
TA =-55°C to +125°C
Vee =5.0V ± 10%
Min. =4.50V
Max. = 5.25V (Commercial)
Max. = 5.50V (Military)
VLe = 0.2V
VHe = Vee - 0.2V
SYMBOL
PARAMETER
TEST CONDITIONS(1)
MIN. TYP'(2)
VIH Input HIGH Level
VIL Input LOW Level
IIH Input HIGH Current
IlL Input LOW Current
Guaranteed Logic High Level
Guaranteed LogiC Low Level
Vee =Max., VIN ; Vee
Vee =Max., VIN ; GND
2.0 -
--
--
--
Ise Short Circuit Current
Vee; Max. (3)
-60 -100
Vee; 3V, VIN ; VLe or VHO 10H; -32p.A
VHe Vee
VOH Output HIGH Voltage
VOL Output LOW Voltage
Off State (High Impedance)
loz Output Current
Vee =Min.
VIN ; VIH or VIL
10H; -200p.A
10H; -lOmA MIL
IOH ; -2.6mA COM'L
Vee; 3V, VIN = VLe or VHe, IOL = 3oop.A
Vee; Min.
VIN = VIH or VIL
IOL; 300p.A
IOL = 14mA MIL.
IOL = 24mA COM'L
Vee; Max.
Vo = OAV
Vo= 2.4V
VHe
2.4
2.4
-
-
-
-
-
-
Vee
4.3
4.3
GND
GND
-
-
-
-
NOTES:
1. For conditions shown as max. or min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vee = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
MAX.
-
0.8
5
-5
-
-
-
-
-
VLe
VLe
0.4
0.5
-10
10
UNIT
V
V
p.A
p.A
mA
V
V
p.A
5-58


Part Number IDT54AHCT299
Description High Speed CMOS 8-Input Universal Shift Register
Maker IDT
Total Page 4 Pages
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