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Integrated Device Technology Electronic Components Datasheet

IDT7174S Datasheet

CMOS STATIC RAM 64K

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FEATURES:
• High-speed address/access time
-Military: 45/55ns (max.)
-Commercial: 35/45ns (max.)
• High-speed chip select access time
-Military: 25/30ns (max.)
-Commercial: 20/25ns (max.)
• High-speed comparison time
-Military: 45/55ns (max.)
-Commercial: 37/45ns (max.)
• Low-power operation
-IDT7174S
Active: 300mW (typ.)
• Produced with advanced CEMOS'· high-performance
technology
• Single 5V (±10%) power supply
• Input and output directly TTL-compatible
• Three-state output
• Static operation: no clocks or refresh required
• Standard 28-pin DIP (600 mil), 28-pin THINDIP (400 mil)
and 32-pin LCC
• High-speed asynchronous RAM Clear on Pin 1
(Reset Cycle Time = 2 x TAAl
(Note: Some duty cycle limitations may apply)
• Match Output on Pin 26
• Military product 100% screened to MIL-STD-883, Class B
DESCRIPTION:
The IDT7174 is a high-speed cache address comparator
subsystem consisting of a 65,536 bit static RAM organized as
8K x 8 and an 8-bit comparator. The IDT7174 can also be used
as an 8K x 8 high-speed static RAM. A single IDT7174 can
provide address comparison for 8K cache words as 21 bits of
address organized as 13 word cache address bits and 8 upper
address bits. Two IDT7174s can be combined to provide 29 bits
of address comparison, etc. The IDT7174 also provides a single
RAM clear control, which clears all words in the internal RAM
to zero when activated. This allows the tag bits for all locations
to be cleared at power-on or system reset, a requirement for
cache comparator systems.
The IDT7174 is fabricated using IDT's high-performance,
high-reliability technology - CEMOS. Address access times as
fast as 35ns, chip select times of 20ns and comparison times of
37ns are available with maximum power consumption of 825mW.
All inputs and outputs of the IDT7174 are TTL-compatible
and the device operates from a single 5V supply. Fully static
asynchronous circuitry is used, requiring no clocks or refresh-
ing for operation.
The IDT7174 is packaged in either a 28-pin, 600 mil DIP; Ii
28-pin, 400 mil THINDIP, or a 32-pin leadless chip carrier,
providing high board level packing densities.
The IDT7174 Military grade Cache Comparator is 100% pro-
cessed in compliance to the test methods of MIL-STD-883,
Method 5004, making it ideally suited to military temperature
applications demanding the highest level of performance and
reliability.
FUNCTIONAL BLOCK DIAGRAM
A
256 x 256
•• MEMORY ARRAY
-Vee
-GND
I/O...,...---7---1>-_ _-+__<~
J-:.,,,.,..,.=-c====='
WE
CEMOS is a trademark of Integrated Device Technology, Inc.
MATCH'
("OPEN DRAIN)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
C1986 Integrated Device Technology, Inc.
2-82
SRD7174-001
JULY 1986
Printed in U.S.A.


Integrated Device Technology Electronic Components Datasheet

IDT7174S Datasheet

CMOS STATIC RAM 64K

No Preview Available !

IDT7174S CMOS STATIC RAMS 64K (8K x 8-BIT) CACHE-TAG RAM
PIN CONFIGURATIONS
RESET
A'2
A7
A.
A.
A.
Aa
A2
A,
A.
110,
1/02
I/0a
GND
Vee
WE
MATCH
A.
Ag
A"
AOE,.
CS
110.
1/07
110.
110.
I/0.
DIP
TOP VIEW
SAD7174-002
MILITARY AND COMMERCIAL TEMPERATURE RANGES
I I'LJ LJ U LJ LJ LJ30
As J 5 3 2 LJ 32 ,31
[ A.
A. J6
1 28 C A.
A. J7
A3 J8
A2 J.
A, J 10
27 [
26 C
25 [
24 [
A"
NC
OE
A,o
As J11
NC J 12
23 [ CS
22 [ 110.
I/O, 1/07
ggi3 g ggN MOO" 1ft CD
z
LCC
TOP VIEW
SRD7174-003
LOGIC SYMBOL
A.
A,
A2
Aa
A.
A.
A.
A7
A.
Ag
A,.
A"
A'2
11O,
1/02
I/0a
110.
110.
110.
1/07
110.
MATCH
PIN NAMES
AO-12
1/0 , _8
CS
RESET
MATCH
Address
WE Write Enable
Data Input/Output OE
Output Enable
Chip Select
GND
Ground
Memory Reset
Vce
Power
DatalMemory Match (Open Drain)
SR07174~004
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
RATING
VALUE
UNIT
VrEAM
Terminal Voltage with
Respect to GND
-0.5 to +7.0
V
TA
Operating Temperature
-55 to +125
°C
TB1AS
Temperature Under Bias
-65 to +135
°C
TSTG
Storage Temperature
-65 to +150
°C
Pr Power Dissipation
1.0 W
lour
DC Output Current
50 mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation 01 the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
Vee
GND
Supply Voltage
Supply Voltage
4.5 5.0 5.5
a0 0
V
V
V,H Input High Voltage 2.2
V'L Input Low Voltage -0.5(1)
NOTE:
1. V1L min::: -3.0V for pulse width less than 20ns.
-
-
6.0 V
0.8 V
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
GRADE
Military
AMBIENT
TEMPERATURE
-55°C to +125°C
GND
OV
Vee
5.0V ± 10%
Commercial
O°C to +70°C
OV 5.0V ± 10%
2-83


Part Number IDT7174S
Description CMOS STATIC RAM 64K
Maker IDT
Total Page 7 Pages
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