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Integrated Device Technology Electronic Components Datasheet

IDT7M204S Datasheet

CMOS Parallel In-Out FIFO Module

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FEATURES:
• First-In, First-Out memory module
• 2K x 9 organization (IDT7M203S)
• 4K x 9 ()rganization (IDT7M204S)
• ,-ow-power consumption
• Asynchronous and simultaneous read and write
• Fully expandable by both word depth and/or bit width
• Assembled with IDT's high-reliability vapor phase solder reflow
process
• Single SV (±10%) power supply
• Master/slave multiprocessing applications
• Bidirectional and rate buffer applications
• Empty and full warning flags
• High-performance CEMOS·· technology
• Pin compatible with IDT7201 and Mostek MK4501, but with four
times word depth (IDT7M203S) or eight times (IDT7M204S)
• Module available with semiconductor components 100%
screened to MIL-STD-883, Class B
PIN CONFIGURATION
W Vee
08 04
03 05
02 06
01 07
00 FL
Xi R$
FF EF
QO XO
Q1 Q7
Q2 06
Q3 Q5
Q8 Q4
GNO -L_ _ _ _.....J"- R
DIP
TOP VIEW
SSD7M203-001
PIN NAMES
W=
WRITE
R=
READ
FL =
FIRST LOAD
D=
DATA IN
RS =
RESET
Q=
DATA OUT
XI =
EXPANSION IN
XO =
EXPANSION
OUT
FF =
FULL FLAG
EF =
EMPTY FLAG
Vee =
5V
GND=
GROUND
DESCRIPTION:
The IDT7M203/204 are FIFO memory modules that utilize a
special First-In, First-Out algorithm that loads and empties data
on a first-in, first-out basis. The device uses full and empty flags
to prevent data overflow and underflow and expansion logic to
allow for unlimited expansion capability in both word size and
depth.
.
The reads and writes are internally sequential through the use
of ring pointers, with no address information required to load and
unload data. Data is toggled in and out of the device through the
use of the WRITE (W) and READ (R) pins. The device has a
read/write cycle time of 65ns (15MHz) for commercial and 70ns
(14MHz) for military temperature ranges.
The device utilizes a 9-bit wide data array to allow for control
and parity bits at the user's option. This feature is especially
useful in data communications applications where it is necessary
to use a parity bit for transmission/reception error checking.
The IDT7M203/204 are constructed on a multi-layered ceramic
substrate using four IDT7201 (S12x9) or four IDT7202 (1 Kx9)
FIFOs in leadless chip carriers. Extremely high speeds are
achieved in this fashion due to the use of IDT7201 s and IDT7202s
fabricated in IDT's high-performance CEMOS technology.
IDT's military FI FO modules have semiconductor components
100% processed to the test methods of MIL-STD-883, Class B,
making them ideally suited to applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
IDT7201/2
XI F[
-~~
Xo
IDT7201I2
IDT7201/2
XI FL
L...!'-~
EF -Ka~g======~==:=l_ _
'---
OUAL 4-INPUT OR GATE
QEMOS is a trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
Cl 1986 Integrated Device Technology, Inc.
7-18
JULY 1986
Printed in U.S.A.


Integrated Device Technology Electronic Components Datasheet

IDT7M204S Datasheet

CMOS Parallel In-Out FIFO Module

No Preview Available !

IDT7M203S/IDT7M204S
CMOS PARALLEL IN-OUT FIFO MODULE (2K x 9-BIT & 4K x 9-BIT)
ABSOLUTE MAXIMUM RATlNG(1)
SYMBOL
RATING
VTERM
Terminal Voltage
with Respect
toGND
TA
Operating
Temperature
COMMERCIAL MILITARY UNIT
-0.5 to +7.0 -0.5 to +7.0 V
oto +70
-55 to +125 'C
TBtAS
Temperature
Under Bias
-10 to +85' -65 to +135 'C
TSTG
Storage
Temperature
-55 to +125 -65 to +150 'C
PT Power Dissipation
4.0
4.0 W
lOUT
DC Output Current
50
50 mA
NOTE:
1.Stressesgreaterthan those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification IS not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
Vcc
Vcc
GND
V'H
Military Supply Voltage
Commercial Supply Voltage
Supply Voltage
Input High Voltage
Commercial
4.5 5.0 5.5
4.5 5.0 5.5
000
2.0 - -
V
V
V
V
Input High Voltage
V'H Military
2.2 -
-
V
V'l(1)
Input Low Voltage
Commercial & Military
- - O.S V
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(Vee =5V ± 10%, TA =-55'G to +125°G and O'G to +70°C)
SYMBOL
PARAMETER
I'l
10l
VOH
VOL
ICCl
ICC2
ICC3
Input Leakage Current (Any Input)
Output Leakage Current
Output Logic "I" Voltage IH - -2mA
Output Logic "0" Voltage I l - SmA
Average Vcc Power Supply Current
Average Standby Current
(A =W =AS =IT =V'H)
Power Down Current
(All Input =Vcc -0.2V)
IDT7M203S
IDT7M204S
COMMERCIAL
MIN.
TYP.
MAX.
-5 -
5
-10 -
10
2.4 -
-
- - 0.4
- 110 176
- 20 33
- - 20
NOTES:
1. Measurements with 0.4 ~ V1N ~ Vee.
2. R2:VIHIO.4~VOUT~VCC.
3. Icc measurements are made with outputs open.
MIN.
-10
-10
2.4
-
-
-
IDT7M203S
IDT7M204S
MILITARY
TYP.
-
-
-
-
155
30
MAX.
10
10
-
0.4
230
60
- - 36
UNIT NOTES
p.A 1
p.A 2
V-
V-
mA 3
mA 3
mA 3
I
7-19


Part Number IDT7M204S
Description CMOS Parallel In-Out FIFO Module
Maker IDT
Total Page 10 Pages
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