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125N10T - N-Channel MOSFET

General Description

Drain Current ID=120A@ TC=25℃ Drain Source Voltage- : VDSS=100V(Min) Static Drain-Source On-Resistance : RDS(on) = 5.8mΩ(Max)@VGS= 10V; ID= 40A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mo

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 125N10T DESCRIPTION ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.8mΩ(Max)@VGS= 10V; ID= 40A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch mode power supplies ·DC-DC converters for telecom, Off-line UPS，automotive System, solenoid and Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID IDM Ptot Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Pulsed Drain Current Total Dissipation@TC=25℃ Total Dissipation@Ta=25℃ Tj Max.