INCHANGE Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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Thick Film Hybrid IC INCHANGE STK4132¢ò 2ch AF Power Amplifier (Split Power Supply) ‹ Features ©q Package Dimensions Pin compatible with the STK4

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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isc Three Terminal Positive Voltage Regulator 78M05 FEATURES ·Output current in excess of 0.5A ·Output voltage of 5V ·Internal thermal overload prot

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC=

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N90 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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isc Silicon NPN Power Transistor MJE240 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 80 V(Min) ·DC Current Gain- : hFE = 40(Min)

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification MJH11020 DESCRIPTION ·High DC Current Gain- : hFE = 400

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOD482 ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SW069R10VS ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·Low on

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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