INCHANGE Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE =60-200@ IC= 1A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD333 DESCRIPTION ·High DC Current Gain ·Complement to type BD334 ·Minimum Lot-to-Lot variat

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isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Mini

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INCHANGE Semiconductor isc Product Specification isc Three Terminal Negative Voltage Regulator 7912 FEATURES ·Output current in excess of 1.5A ·Ou

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www.DataSheet.co.kr Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2SC1061 DESCRIPTION With TO-220 package Low saturatio

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

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INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator L7912CV FEATURES ·Output current in excess of 1.5A ·Output voltage of -12V ·In

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Di

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1441 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching S

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD335 DESCRIPTION ·High DC Current Gain ·Complement to type BD336 ·Minimum Lot-to-Lot variat

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isc Three Terminal Positive Voltage Regulator FEATURES ·Output current in excess of 1.5A ·Output voltage of 5 V ·Internal thermal overload protection

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Thyristors TIC106D APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Max IGT of 200μA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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