Inchange Semiconductor IRFB4321
N-Channel MOSFET
| Part No. | IRFB4321 |
|---|---|
| Datasheet | IRFB4321 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on) ≤15mΩ●Enhancement mode
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High Efficiency Synchronous Rectification in SMPS
●Uninterruptible Power Supply
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 85 UNIT V V A IDM Drain Current-Single Pulsed 330 A PD Total Dissipation @TC=25℃ 350 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.43 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFB4321，IIRFB4321
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage V...